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China Semiconductor Etching Carrier Manufacturers, Suppliers, Factory

owing to excellent support, a variety of top of the range items, aggressive rates and efficient delivery, we enjoy a very good reputation among our clients. We have been an energetic firm with wide market for Semiconductor Etching Carrier,Etch Carrier(ICP/PSS),SiC-Coated Plasma Etch Susceptor,SiC Etching Fixture,SiC Etching Solutions, We sincerely welcome domestic and foreign merchants who calls, letters asking, or to plants to negotiate, we will offer you quality products and the most enthusiastic service,We look forward to your visit and your cooperation.
Semiconductor Etching Carrier, Many products fully conform to the most rigorous of international guidelines and with our first-rate delivery service you will have them delivered at any time and in any place. And because Kayo deals in the entire spectrum of protective equipment, our customers don't have to waste time shopping around.

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    Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Silicon Carbide Chamber Lid

    Silicon Carbide Chamber Lid

    Silicon Carbide Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Wafer Carrier Semiconductor

    Wafer Carrier Semiconductor

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Semiconductor for many years. Our Wafer Carrier Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD SiC Coated Graphite Pancake Susceptor

    CVD SiC Coated Graphite Pancake Susceptor

    Semicorex provides high-quality CVD SiC coated graphite pancake susceptor. We have been manufacturer and supplier of graphite materials for many years. Our CVD SiC coated graphite pancake susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
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  • Substantial growth of the SiC coated graphite susceptor market

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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