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China SiC Etching Solutions Manufacturers, Suppliers, Factory

Assume full accountability to meet all requires of our purchasers; realize continual advancements by selling the advancement of our customers; grow to be the final permanent cooperative partner of consumers and maximize the interests of clientele for SiC Etching Solutions,Etch Carrier(ICP/PSS),SiC-Coated Plasma Etch Susceptor,SiC Etching Fixture,Etch Carrier, Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.
SiC Etching Solutions, Our factory is equipped with complete facility in 10000 square meters, which makes us be able to satisfy the producing and sales for most auto part solutions. Our advantage is full category, high quality and competitive price! Based on that, our goods win a high admiration both at home and abroad.

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  • Mechanical Seal for Pump

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    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Mechanical Seal for pump has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD and CVI Vacuum Furnace

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated products in China. We provide custom furnace solutions. Our CVD and CVI Vacuum Furnace has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

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