China SiC Etching Solutions Manufacturers, Suppliers, Factory

Carbon/carbon composite materials refer to composite materials composed of carbon fiber reinforcement and carbon-based matrix. They have the characteristics of low density, high strength, high specific modulus, low thermal expansion coefficient, etc. Their super high temperature resistance makes them the most promising high-temperature material.

Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

At present, the synthesis methods of high-purity SiC powder for growing single crystals mainly include: CVD method and improved self-propagating synthesis method (also known as high-temperature synthesis method or combustion method).

Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

Semiconductor equipment consists of chambers and chambers, and most ceramics are used in chambers closer to the wafers. Ceramic parts, important components widely used in the cavities of core equipment, are semiconductor equipment components manufactured through precision processing using advanced ceramic materials such as alumina ceramics, aluminum nitride ceramics, and silicon carbide ceramics.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.