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China Sic-Coated Plasma Etch Susceptor Manufacturers, Suppliers, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Sic-Coated Plasma Etch Susceptor,Graphite Susceptor,Silicon Carbide Susceptor,Graphite Disc,Planet Carrier, We have been prepared to offer you the top suggestions on the designs of one's orders in a professional way if you need. During the meantime, we retain on developing new technologies and building new designs so as for making you ahead within the line of this business.
Sic-Coated Plasma Etch Susceptor, During in 11 years, We now have participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

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  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Second Half Parts for Lower Baffles in Epitaxial Process

    Second Half Parts for Lower Baffles in Epitaxial Process

    Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Isostatic Graphite Crucibles for Melting

    Isostatic Graphite Crucibles for Melting

    Semicorex Isostatic Graphite Crucibles for Melting are produced using isostatic pressing techniques, which enhance their material density and mechanical properties. This results in a vessel that not only withstands the extreme temperatures and corrosive environments typical of semiconductor processing but also offers long-term durability. The crucibles’ robustness ensures they can handle repeated thermal cycling without degradation, thereby providing consistent performance over extended operational periods. We at Semicorex are dedicated to manufacturing and supplying high-performance Isostatic Graphite Crucibles for Melting that fuse quality with cost-efficiency.
  • ESC Chuck

    ESC Chuck

    Semicorex ESC Chuck is a critical component in the semiconductor industry, specifically designed to securely hold wafers during various fabrication processes. Semicorex provides top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • SiC Ceramic Plate

    SiC Ceramic Plate

    Semicorex SiC Ceramic Plate offers unmatched performance in environments requiring wear resistance, corrosion resistance, and high-temperature stability. This product is designed for use as lining plates and support parts across a variety of demanding applications.
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
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  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

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