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China Sic-Coated Plasma Etch Susceptor Manufacturers, Suppliers, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Sic-Coated Plasma Etch Susceptor,Graphite Susceptor,Silicon Carbide Susceptor,Graphite Disc,Planet Carrier, We have been prepared to offer you the top suggestions on the designs of one's orders in a professional way if you need. During the meantime, we retain on developing new technologies and building new designs so as for making you ahead within the line of this business.
Sic-Coated Plasma Etch Susceptor, During in 11 years, We now have participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

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    SiC Focus Rings

    Semicorex advanced, high-purity SiC Focus Rings are built to withstand the extreme environments in plasma etch (or dry etch) chambers. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Semiconductor Quartz Tank

    Semiconductor Quartz Tank

    Semicorex Semiconductor Quartz Tank stands as an indispensable component within the realm of semiconductor processing, serving as a meticulously engineered vessel designed to facilitate the cleaning and treatment of delicate wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Solid Silicon Carbide Focusing Ring

    Solid Silicon Carbide Focusing Ring

    The Semicorex Solid Silicon Carbide Focusing Ring is a pivotal component in semiconductor manufacturing, strategically positioned outside the wafer to maintain direct contact. By utilizing an applied voltage, this ring focuses the plasma traversing it, thereby enhancing the process uniformity on the wafer. Constructed solely from Chemical Vapor Deposition Silicon Carbide (CVD SiC), this focus ring embodies the exceptional qualities demanded by the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Solid Silicon Carbide Focusing Ring that fuse quality with cost-efficiency.
  • Graphite Thermal Field

    Graphite Thermal Field

    Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
  • RTP SiC Coating Plates

    RTP SiC Coating Plates

    Semicorex RTP SiC Coating Plates are high-performance wafer carriers engineered for use in demanding Rapid Thermal Processing environments. Trusted by leading semiconductor manufacturers, Semicorex delivers superior thermal stability, durability, and contamination control backed by rigorous quality standards and precision manufacturing.*
  • SiC Thermocouple Protection Tubes

    SiC Thermocouple Protection Tubes

    ​Manufactured by high-quality silicon carbide materials, SIC thermocouple protection tubes are advanced ceramic solutions used to protect thermocouples from operating normally in demanding high-temperature environments.Choose Semicorex for precision-engineered SIC thermocouple protection tubes that ensure consistent quality, cost-effective price, and maximized cooling efficiency.
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  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

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