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Epitaxial Layer, We are your reliable partner in international markets with the best quality products. Our advantages are innovation, flexibility and reliability which have been built during the last twenty years. We focus on providing service for our clients as a key element in strengthening our long-term relationships. Our continual availability of high grade products in combination with our excellent pre-sales and after-sales service ensures strong competitiveness in an increasingly globalized market.

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  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Epitaxy Disc

    SiC Coated Epitaxy Disc

    There are extensive properties of Semicorex SiC Coated Epitaxy Disc that make it an indispensable component in semiconductor manufacturing, where the precision, durability, and robustness of equipment are paramount for the success of high-tech semiconductor devices. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Coated Epitaxy Disc that fuse quality with cost-efficiency.**
  • Tantalum Carbide Chuck

    Tantalum Carbide Chuck

    Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Epitaxy Wafer Carrier

    Epitaxy Wafer Carrier

    Semicorex Epitaxy Wafer Carrier provides a highly reliable solution for Epitaxy applications.The advanced materials and coating technology ensure that these carriers deliver outstanding performance, reducing operational costs and downtime due to maintenance or replacement.**
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

    Semicorex SiC Coated Wafer Carriers are high-purity graphite susceptors coated with CVD silicon carbide, designed for optimal wafer support during high-temperature semiconductor processes. Choose Semicorex for unmatched coating quality, precision manufacturing, and proven reliability trusted by leading semiconductor fabs worldwide.*
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  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

  • Wolfspeed Pauses German Semiconductor Plant Construction Plans

    According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.Ⅱ)

    In the chemical vapor deposition (CVD) process, the gases used mainly include reactant gases and carrier gases. Reactant gases provide atoms or molecules for the deposited material, while carrier gases are used to dilute and control the reaction environment. Below are some commonly used CVD gases:

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