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To continually improve the management procedure by virtue in the rule of "sincerely, great religion and good quality are the base of company development", we commonly absorb the essence of associated products and solutions internationally, and regularly build new solutions to meet the calls for of consumers for epitaxial silicon wafer,tantalum carbide,selective epitaxial growth,mbe epitaxy,epitaxial growth, We are really proud of your great name from our shoppers for our products' reputable quality.
epitaxial silicon wafer, As an experienced manufacturer we also accept customized order and we could make it the same as your picture or sample specification. The main goal of our company is to live a satisfactory memory to all the customers, and establish a long term business relationship with buyers and users all over the world.

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  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • Graphite Powder

    Graphite Powder

    Semicorex Graphite Powder (99.999% purity, 1-5 µm particle size) is a high-performance material essential for semiconductor crystal growth, offering superior purity and stability. Semicorex ensures the highest quality standards, providing tailored solutions for advanced manufacturing.*
  • SiC Coated MOCVD Graphite Satellite Platform

    SiC Coated MOCVD Graphite Satellite Platform

    Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Silicon Carbide Liner

    Silicon Carbide Liner

    Semicorex Silicon Carbide Liner is a versatile and robust material that serves as an invaluable asset in optimizing the efficiency and longevity of industrial processing equipment.
  • N-type SiC Substrates

    N-type SiC Substrates

    Semicorex N-type SiC substrates will continue to drive the semiconductor industry towards higher performance and lower energy consumption, as the core material for efficient energy conversion. Semicorex products are driven by technological innovation, and we are committed to providing customers with reliable material solutions and working with partners to define a new era of green energy.*
  • Alumina Robot Arm

    Alumina Robot Arm

    Semicorex Alumina Robot Arm is a high-performance ceramic component designed for precise wafer handling in semiconductor manufacturing. Its superior strength, insulation, and thermal stability make it ideal for demanding cleanroom automation environments.*
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  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Carbon/carbon composite molding process

    Carbon/carbon composite materials refer to composite materials composed of carbon fiber reinforcement and carbon-based matrix. They have the characteristics of low density, high strength, high specific modulus, low thermal expansion coefficient, etc. Their super high temperature resistance makes them the most promising high-temperature material.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

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