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  • RTP/RTA SiC Coating Carrier

    RTP/RTA SiC Coating Carrier

    Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Diffusion Furnace Tube

    Diffusion Furnace Tube

    Semicorex Diffusion Furnace Tube is a crucial component within semiconductor manufacturing equipment, specifically designed to facilitate precise and controlled reactions essential for semiconductor fabrication processes. As the primary vessel within the reaction zone of a semiconductor furnace, the diffusion furnace tube plays a pivotal role in ensuring the integrity and quality of the produced semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Boat Holder

    SiC Boat Holder

    The SiC Boat Holder by Semicorex is innovatively forged from SiC, explicitly tailored for pivotal roles within the photovoltaic, electronic, and semiconductor sectors. Engineered with precision, the Semicorex SiC Boat Holder offers a protective, stable milieu for wafers through every stage—be it processing, transit, or storage. Its meticulous design ensures precision in dimensions and evenness, crucial for minimizing wafer deformation and maximizing operational yield.
  • Tantalum Carbide Coating Guide Ring

    Tantalum Carbide Coating Guide Ring

    Semicorex Tantalum Carbide Coating Guide Ring is an advanced component specifically designed for the semiconductor industry, playing a crucial role in the growth of Silicon Carbide (SiC) crystals. This product is engineered to meet the stringent demands of high-temperature and high-stress environments inherent in semiconductor crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Fused Quartz Crucibles

    Fused Quartz Crucibles

    Semicorex Fused Quartz Crucibles are high-purity containers designed for semiconductor crystal growth, offering exceptional thermal stability and contamination resistance for defect-free wafer production. Choose Semicorex for strict material purity control, precision manufacturing, and proven reliability in the world’s most demanding semiconductor processes.*
  • Related Blog
  • Reviews

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

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