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  • Quartz Crucible

    Quartz Crucible

    Semicorex quartz crucible is designed for use in the single-crystal growth of semiconductor materials, ensuring optimal performance and crystal quality. Choose Semicorex for our superior craftsmanship, precision engineering, and commitment to delivering products that meet the highest industry standards.*
  • Tantalum Carbide Coated Graphite Parts

    Tantalum Carbide Coated Graphite Parts

    Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD TaC Coating Cover

    CVD TaC Coating Cover

    Semicorex CVD TaC Coating Cover has been becoming a critical enabling technology in the demanding environments within epitaxy reactors, characterized by high temperatures, reactive gases, and stringent purity requirements, necessitate robust materials to ensure consistent crystal growth and prevent unwanted reactions.**
  • SiN Substrates

    SiN Substrates

    Semicorex Silicon Nitride SiN substrates are high-performance materials known for their exceptional strength, thermal conductivity, and chemical stability, making them ideal for advanced semiconductor applications. Choosing Semicorex SiN substrates ensures you benefit from cutting-edge technology, rigorous quality control, and a commitment to delivering reliable, industry-leading semiconductor components.*
  • SiC Ceramic Heat Transfer Plates

    SiC Ceramic Heat Transfer Plates

    Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
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  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Coating in the thermal field of semiconductor silicon single crystals

    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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