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China Carbide-Coated Reactor Manufacturers, Suppliers, Factory

During the past few years, our business absorbed and digested state-of-the-art technologies the two at home and abroad. Meanwhile, our firm staffs a group of experts devoted to your development of Carbide-Coated Reactor,SiC Coated for Epitaxial Growth,SiC Coated Susceptor for LPE,Graphite Barrel Susceptor,Liquid Phase Epitaxy, We've been devoted to offer professional purification technology and methods in your case!
Carbide-Coated Reactor, We strongly believe that technology and service is our base today and quality will create our reliable walls of future. Only we have better and better quality , could we achieve our customers and ourselves, too. Welcome customers all over the word to contact us for getting further business and reliable relationships. We are always here working for your demands whenever you need.

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  • Advantages of TaC Coating in SiC Single Crystal Growth

    Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the silicon carbide device production chain.

  • GaN Industry Applications

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  • MOCVD is the key equipment

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    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

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  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

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