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SiC Coated for Epitaxial Growth, Our products have mainly exported to south-east Asia Euro-America, and sales to all of our country. And depending on excellent quality, reasonable price, best service, we have got good feedback from customers overseas. You are welcomed to join us for more possibilities and benefits. We welcome customers, business associations and friends from all parts of the world to contact us and seek cooperation for mutual benefits.

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  • EPI 3 1/4

    EPI 3 1/4" Barrel Susceptor

    Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • MOCVD Wafer Carriers for Semiconductor Industry

    MOCVD Wafer Carriers for Semiconductor Industry

    Semicorex MOCVD Wafer Carriers for Semiconductor Industry is a top-of-the-line carrier designed for use in the semiconductor industry. Its high-purity material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Epi Pre Heat Ring

    Epi Pre Heat Ring

    Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • Related Blog
  • Reviews

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

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