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SiC Coated for Epitaxial Growth, Our products have mainly exported to south-east Asia Euro-America, and sales to all of our country. And depending on excellent quality, reasonable price, best service, we have got good feedback from customers overseas. You are welcomed to join us for more possibilities and benefits. We welcome customers, business associations and friends from all parts of the world to contact us and seek cooperation for mutual benefits.

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    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • TaC Coated Graphite Parts

    TaC Coated Graphite Parts

    Semicorex TaC Coated Graphite Parts are precision-crafted components that are specially designed to withstand the demanding environment of semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Ring

    Tantalum Carbide Coated Ring

    Semicorex Tantalum Carbide Coated Ring is a crucial component used in semiconductor processing. It is designed with a specialized coating that serves multiple functions to enhance the efficiency and longevity of graphite components within semiconductor machinery. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • MOCVD Heater

    MOCVD Heater

    The MOCVD Heater by Semicorex is a highly advanced and meticulously engineered component that offers a multitude of advantages, including exceptional chemical purity, thermal efficiency, electrical conductivity, high emissivity, corrosion resistance, inoxidizability, and mechanical strength.**
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  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

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