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  • SiC Fine Powder

    SiC Fine Powder

    Semicorex SiC Fine Powder is a high-quality, ultra-fine powder known for its exceptional purity and controlled particle size distribution. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Cassette Box

    Wafer Cassette Box

    Semicorex Wafer Cassette Box is a PFA fluoroplastic cassette with a large opening area, designed to improve wafer washing and drying performance in semiconductor manufacturing. Choose Semicorex for its proven track record of delivering high-quality, durable, and chemically resistant wafer handling solutions.*
  • Epi Pre Heat Ring

    Epi Pre Heat Ring

    Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
  • Glass-like Carbon Coated Rigid Felt

    Glass-like Carbon Coated Rigid Felt

    The Glass-like Carbon Coated Rigid Felt, a signature product of Semicorex,consists of a Carbon Fiber rigid felt substrate enveloped by a glass-like carbon coating, combining the inherent strength of the felt with the exceptional surface properties of the glass-like carbon. Together, they create a material that stands out for its performance under extreme conditions.**
  • Durable SiC-Coated Barrel Susceptor

    Durable SiC-Coated Barrel Susceptor

    With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.
  • 6 inch SiC Boat

    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • Related Blog
  • Reviews

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

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