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"Sincerity, Innovation, Rigorousness, and Efficiency" may be the persistent conception of our organization for that long-term to establish jointly with customers for mutual reciprocity and mutual gain for SiC wafer,12-inch wafer,silicon carbide substrate,epi-wafer,silicon carbide, We generally keep the philosophy of win-win, and develop long-term cooperation connection with buyers from around the planet.We feel that our expansion foundation on customer's achievement, credit rating is our daily life.
SiC wafer, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective products and meticulous after-sales service. We firmly believe that: we are outstanding as we are specialized.

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  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Quartz Sand

    Quartz Sand

    Semicorex is a leading provider of ultra-high purity quartz sand, offering products with ≥99.995% SiO2 content. Our quartz sand stands out for its exceptional purity, ultra-low alkali metal content, and customizable aluminum content.**
  • SiC Gasket

    SiC Gasket

    Semicorex prioritizes quality and performance, ensuring that each SiC Gasket meets stringent industry standards. Our cutting-edge manufacturing processes guarantee that our products deliver consistent and reliable results, positioning Semicorex as a leader in the field of advanced ceramics.
  • CFC Fixtures

    CFC Fixtures

    Semicorex CFC fixtures, also known as carbon fibre composite fixtures, are becoming more and more popular in the heat treating sector. They provide a strong advantage over conventional metallic fixtures.
  • CCB Brakes

    CCB Brakes

    Semicorex CCB Brakes (Carbon-Ceramic Brakes with Coated Friction Layer) represent the next generation of high-performance braking solutions, engineered for extreme durability, thermal stability, and consistent braking under the most demanding conditions. Choose Semicorex for its expertise in advanced ceramic composites and precision-engineered coating technologies.*
  • Related Blog
  • Reviews

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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