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"Sincerity, Innovation, Rigorousness, and Efficiency" may be the persistent conception of our organization for that long-term to establish jointly with customers for mutual reciprocity and mutual gain for SiC wafer,12-inch wafer,silicon carbide substrate,epi-wafer,silicon carbide, We generally keep the philosophy of win-win, and develop long-term cooperation connection with buyers from around the planet.We feel that our expansion foundation on customer's achievement, credit rating is our daily life.
SiC wafer, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective products and meticulous after-sales service. We firmly believe that: we are outstanding as we are specialized.

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  • Wafer Boat for Semiconductor Process

    Wafer Boat for Semiconductor Process

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Wafer Boat for Semiconductor Process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Horizontal Wafer Cassette

    Horizontal Wafer Cassette

    Semicorex Horizontal Wafer Cassette is an essential tool in the semiconductor manufacturing industry, offering significant advantages in wafer protection, contamination control, and processing efficiency.
  • Rigid Graphite Felt

    Rigid Graphite Felt

    Semicorex Rigid Graphite Felt is a high-performance thermal insulation material made from PAN-based and viscose-based carbon fiber, widely used in high-temperature industrial furnaces. Choose Semicorex for its advanced manufacturing processes and proven expertise in delivering durable and reliable solutions for demanding semiconductor applications.*
  • Glass-like Carbon Coating

    Glass-like Carbon Coating

    Semicorex Glass-like carbon coating is an advanced protective layer engineered for high-performance applications requiring exceptional hardness, thermal stability, and low particulate emission. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • Graphite Crucibles

    Graphite Crucibles

    Semicorex graphite crucibles engineered for exceptional thermal stability and contamination control in semiconductor crystal growth processes. Choose our graphite crucibles for unmatched purity, performance, and reliability in semiconductor crystal growth. *
  • Horizontal Chamber Furnace SiC boats

    Horizontal Chamber Furnace SiC boats

    Semicorex Horizontal Chamber Furnace SiC Boats are high-purity silicon carbide carrier designed for secure wafer holding during high-temperature horizontal furnace processing. Choosing Semicorex means benefiting from precise engineering, exceptional durability, and superior thermal performance for consistent, high-yield production.*
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  • Reviews

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

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