English
Home > Products > Sic Wafer Tray

China Sic Wafer Tray Manufacturers, Suppliers, Factory

We've one of the most advanced generation tools, experienced and qualified engineers and workers, recognized good quality manage systems and a friendly skilled product sales workforce pre/after-sales support for Sic Wafer Tray,Wafer Transfer Boat,Wafer Processing Boat,Semiconductor Wafer Holder,Silicon Wafer Holder, We warmly welcome clients from all around the world for almost any sort of cooperation with us to build a mutual advantage potential. We've been devoting ourselves wholeheartedly to supply consumers the very best company.
Sic Wafer Tray, We believe in establishing healthy customer relationships and positive interaction for business. Close cooperation with our customers has helped us to create strong supply chains and reap benefits. Our products and solutions have gained us widespread acceptance and the satisfaction of our worldwide valued clients.

Related Products

Hot Products

  • Graphite Single Silicon Pulling Tools

    Graphite Single Silicon Pulling Tools

    Semicorex Graphite Single Silicon Pulling Tools emerge as unsung heroes in the fiery crucible of crystal growth furnaces, where temperatures soar and precision reigns supreme. Their remarkable properties, honed through innovative manufacturing, make them essential for coaxing flawless single crystal silicon into existence.**
  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • SiC Boat

    SiC Boat

    Semicorex SiC Boat is advanced component meticulously designed for semiconductor manufacturing, specifically in diffusion and thermal processes. With our unwavering commitment to providing high-quality products at competitive prices, we are prepared to be your long-term partner in China.*
  • Semiconductor Cassette

    Semiconductor Cassette

    Semicorex Semiconductor Cassette is one of the critical components designed to ensure the safety and integrity of delicate wafer. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Gas Distribution Plates

    Gas Distribution Plates

    Semicorex Gas Distribution Plates, made of CVD SiC is a critical component in plasma etching systems, designed to ensure uniform gas dispersion and consistent plasma performance across the wafer. Semicorex is the trusted choice for high-performance ceramic solutions, offering unmatched material purity, engineering precision, and dependable support tailored to the demands of advanced semiconductor manufacturing.*
  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

Related Search

SiC Wafer Tray for RTP

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept