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    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • GaN-on-SiC Epitaxial Wafers Carrier

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    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
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    Tantalum Carbide Coated Ring

    Semicorex Tantalum Carbide Coated Ring is a crucial component used in semiconductor processing. It is designed with a specialized coating that serves multiple functions to enhance the efficiency and longevity of graphite components within semiconductor machinery. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Support Ring

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  • MOCVD is the key equipment

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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