English
Home > Products > SiC Wafer Tray for RTP

China SiC Wafer Tray for RTP Manufacturers, Suppliers, Factory

With our outstanding management, robust technical capability and strict top quality regulate system, we carry on to supply our shoppers with reputable top quality, reasonable charges and excellent companies. We purpose at becoming amongst your most reliable partners and earning your fulfillment for SiC Wafer Tray for RTP,RTP/RTA,RTP/RTA Carrier,SiC Coated Graphite Susceptors,SiC Coating Plate, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
SiC Wafer Tray for RTP, Our professional engineering group will always be ready to serve you for consultation and feedback. We are able to also offer you with absolutely free samples to meet your requirements. Finest efforts will likely be produced to give you the ideal service and goods. For anyone who is thinking about our company and merchandise, please contact us by sending us emails or contact us quickly. As a way to know our merchandise and firm. lot more, you can come to our factory to find out it. We'll always welcome guests from all over the world to our business to build company relations with us. Please feel free to get in touch with us for business and we believe we are going to share the top trading practical experience with all our merchants.

Related Products

Hot Products

  • Tantalum Carbide Chuck

    Tantalum Carbide Chuck

    Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Ceramic Boats

    SiC Ceramic Boats

    Semicorex SiC ceramic boats provide the optimal combination of purity, strength, thermal resistance, and dimensional accuracy required for the rigorous demands of modern semiconductor wafer processing. *
  • Electrostatic Chuck ESC

    Electrostatic Chuck ESC

    Semicorex Electrostatic Chuck ESC is a highly specialized tool designed to enhance precision and efficiency in semiconductor manufacturing processes. Our E-Chucks have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.*
  • MOCVD Inlet Seal Ring

    MOCVD Inlet Seal Ring

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Seal Ring has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Membrane

    SiC Membrane

    Semicorex SiC Membrane is a high-performance ceramic filtration solution made from high-purity silicon carbide, designed for challenging industrial filtration applications. Choose Semicorex for reliable, durable, and efficient SiC membranes that deliver exceptional performance and long-term value in even the most demanding environments.*
  • Related Blog
  • Reviews

  • What is a Dummy Wafer?

    In the semiconductor manufacturing process, wafers form the foundation of chip production. Among these, a special type of wafer, referred to as the Dummy Wafer, plays a pivotal role in ensuring equipment stability and controlling production costs.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept