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Well-run gear, qualified revenue workforce, and superior after-sales companies; We've been also a unified huge loved ones, anyone persist with the organization benefit "unification, determination, tolerance" for Led Wafer,Gan Wafer,MOCVD Led,Aln Ceramic Substrate,Graphite Plate, We fully welcome shoppers from all around the world to ascertain stable and mutually effective enterprise interactions, to have a dazzling long run jointly.
Led Wafer, We rely on high-quality materials, perfect design, excellent customer service and the competitive price to win the trust of many customers at home and abroad. 95%products are exported to overseas markets.

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    Wafer Vacuum Chuck

    Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure ceramic components ensure minimal contamination and provide exceptionally long life performance. Our Wafer Vacuum Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • 8 Inch N-type SiC Wafer

    8 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our 8 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Semiconductor SiC Components for Epitaxial

    Semiconductor SiC Components for Epitaxial

    Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Nitride Bearing

    Silicon Nitride Bearing

    Semicorex Silicon Nitride Bearing represents the pinnacle of engineering excellence, offering unparalleled performance and reliability in a wide array of industrial applications. Renowned for their exceptional strength, durability, and versatility, Silicon Nitride Bearing have become the preferred choice across various sectors, from aerospace and automotive to medical and manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Cassette Boats

    Silicon Cassette Boats

    Semicorex silicon cassette boats are specialized carriers manufactured of 99.9999999% high-purity monocrystalline and polycrystalline silicon, especially focused on high semiconductor manufacturing. Selecting Semicorex means you will benefit from reliable quality, customization services and increased productivity.
  • TaC Coated Components in Epitaxial Growth

    TaC Coated Components in Epitaxial Growth

    Semicorex TaC Coated Components in Epitaxial Growth is a precious machined part located in the air intake in the epitaxial process in semiconductor. Semicorex is a top-notch company that specializes in CVD TaC coating technology in China, and exports products worldwide.*
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  • Reviews

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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