China Led Wafer Manufacturers, Suppliers, Factory

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.