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  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • SOI Wafer Silicon On Insulator

    SOI Wafer Silicon On Insulator

    Semicorex SOI Wafer Silicon On Insulator is a specialized type of semiconductor wafer used in the production of advanced integrated circuits. They are designed to improve the performance, power efficiency, and reliability of electronic devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Fused Quartz Wafer Boat

    Fused Quartz Wafer Boat

    Crafted with utmost precision and engineered to meet the exacting demands of the semiconductor industry, Semicorex fused quartz wafer boat is designed to elevate your semiconductor production processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ceramic Composite Heaters

    Ceramic Composite Heaters

    Semicorex Ceramic Composite Heaters deliver ultra-clean, high-efficiency heating performance for demanding high-temperature applications. Choose Semicorex for industry-leading material purity, precision engineering, and reliable customization backed by years of expertise in advanced ceramic technologies.*
  • Quartz Chamber

    Quartz Chamber

    Semicorex Quartz Chamber is an indispensable asset in the etching processes of semiconductor manufacturing and other high-tech industries. With its unique features and broad application range, it delivers superior performance and reliability. By choosing Semicorex’s Quartz Chamber, you are ensuring the highest quality etching results, backed by our unwavering commitment to innovation and customer support. Elevate your etching processes today with our advanced Quartz Chamber technology.*
  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Reviews

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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