Semicorex AlN single crystal wafer is a cutting-edge semiconductor substrate designed for high-power, high-frequency, and deep ultraviolet (UV) applications. Choosing Semicorex ensures access to industry-leading crystal growth technology, high-purity materials, and precise wafer fabrication, guaranteeing superior performance and reliability for demanding applications.*
Semicorex AlN single crystal wafer is a revolutionary advancement in semiconductor technology, offering a unique combination of exceptional electrical, thermal, and mechanical properties. As an ultra-wide bandgap semiconductor material with a bandgap of 6.2 eV, AlN is increasingly recognized as the optimal substrate for high-power, high-frequency, and deep ultraviolet (UV) optoelectronic devices. These properties position AlN as a superior alternative to traditional substrates like sapphire, silicon carbide (SiC), and gallium nitride (GaN), particularly in applications demanding extreme thermal stability, high breakdown voltage, and superior thermal conductivity.
At present, AlN single crystal wafer is commercially available in sizes up to 2 inches in diameter. As research and development efforts continue, advancements in crystal growth technologies are expected to enable larger wafer sizes, enhancing production scalability and reducing costs for industrial applications.
Similar to SiC single crystal growth, AlN single crystals cannot be grown by the melt method but can only be grown by physical vapor transport (PVT).
There are three important growth strategies for AlN single crystal PVT growth:
1) Spontaneous nucleation growth
2) Heteroepitaxial growth on 4H-/6H-SiC substrate
3)Homoepitaxial growth
AlN single crystal wafer is distinguished by their ultra-wide bandgap of 6.2 eV, which guarantees exceptional electrical insulation and unparalleled deep UV performance. These wafers boast a high breakdown electric field that exceeds that of SiC and GaN, positioning them as the optimal choice for high-power electronic devices. With an impressive thermal conductivity of approximately 320 W/mK, they ensure efficient heat dissipation, a critical requirement for high-power applications. AlN is not only chemically and thermally stable but also maintains top performance in extreme environments. Its superior radiation resistance makes it an unrivaled option for space and nuclear applications. Furthermore, its remarkable piezoelectric properties, high SAW velocity, and strong electromechanical coupling establish it as an outstanding candidate for GHz-level SAW devices, filters, and sensors.
AlN single crystal wafer finds extensive applications in various high-performance electronic and optoelectronic devices. They serve as the ideal substrate for deep ultraviolet (DUV) optoelectronics, including deep UV LEDs operating in the 200-280 nm range for sterilization, water purification, and biomedical applications, as well as UV laser diodes (LDs) used in advanced industrial and medical fields. AlN is also widely used in high-power and high-frequency electronic devices, particularly in radio frequency (RF) and microwave components, where its high breakdown voltage and low electron scattering ensure superior performance in power amplifiers and communication systems. Additionally, it plays a crucial role in power electronics, enhancing the efficiency of inverters and converters in electric vehicles, renewable energy systems, and aerospace applications. Furthermore, AlN’s excellent piezoelectric properties and high SAW velocity make it an optimal material for surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices, which are essential for telecommunications, signal processing, and sensing technologies. Due to its exceptional thermal conductivity, AlN is also a key material in thermal management solutions for high-power LEDs, laser diodes, and electronic modules, providing effective heat dissipation and improving device longevity.
Semicorex AlN single crystal wafer represents the future of semiconductor substrates, offering unmatched electrical, thermal, and piezoelectric properties. Their applications in deep UV optoelectronics, power electronics, and acoustic wave devices make them a highly sought-after material for next-generation technology. As fabrication capabilities continue to improve, AlN wafers will become an indispensable component of high-performance semiconductor devices, paving the way for innovative advancements across multiple industries.