SiC Epi-Wafer Susceptors

You can’t manufacture Wide Bandgap (WBG) Semiconductors—essential for the revolution of Electric Vehicles (EVs) and 5G—without establishing the ideal material properties through epitaxial growth. Semicorex  SiC Epi-Wafer Susceptors have been designed for use as the foundation (thermal/structural) for SiC and GaN epitaxy. The combination of isostatic graphite (excellent thermal conductivity) with Chemical Vapor Deposited (CVD) Silicon Carbide (extreme chemical resistance) achieves a process kit that allows for the greatest possible yield and repeatability.

Engineering the "Perfect" Thermal Environment

To achieve adequate epitaxial growth temperatures (over 1,500°C) in an atmosphere saturated in reactive and corrosive precursor gases a conventional graphite carrier would be degraded upon exposure and therefore contaminate the wafer. However, the SiC Epi-Wafer Susceptors developed by Semicorex have achieved a solution via advanced materials integration to provide the epitaxy process with a stable base for thousands of process hours.

1. Superior Thermal Uniformity

The primary role of a susceptor is to act as a heat spreader. Our high-purity isostatic graphite core provides a uniform thermal field across the entire wafer surface. This minimizes "hot spots" that cause variations in epi-layer thickness and doping concentration. In the world of power electronics, where RDS(on) consistency is king, our susceptors deliver the thermal precision required for sub-micron uniformity.

2. Hermetic CVD SiC Encapsulation

We utilize a state-of-the-art CVD process to apply a dense, ultra-pure Silicon Carbide coating. This layer is not just a covering; it is a hermetic seal.

Particle Suppression: The coating prevents the graphite substrate from "dusting" or outgassing impurities like Boron or Metallic traces into the reaction chamber.

Chemical Inertness: Our SiC coating is impervious to H2, HCl, and ammonia (NH3) etching, which are common in MOCVD and SiC Epitaxy reactors.

3. Precision CTE Matching

One of the most common failure points in coated hardware is delamination due to thermal cycling. We specifically select graphite grades with a Coefficient of Thermal Expansion (CTE) that is perfectly synchronized with the SiC coating. This "expansion harmony" allows the SiC Epi-Wafer Susceptors to endure rapid ramp-up and ramp-down cycles without cracking or peeling, extending the component's service life by up to 300% compared to industry-standard alternatives.

Optimized for Global Reactor Platforms

Our engineering team has extensive experience designing susceptors for both horizontal and vertical reactor configurations. We provide drop-in replacements and custom-engineered solutions for the industry’s leading OEM systems (including AIXTRON, Veeco, and Tokyo Electron platforms).

Whether you are running a planetary reactor or a single-wafer tool, our susceptors are optimized for:

Gas Flow Dynamics: Precisely machined pockets to ensure laminar flow across the wafer.

Wafer Rotation: Optimized weight-to-friction ratios for stable, high-speed rotation during growth.

Automated Handling: Reinforced edges to withstand the mechanical stress of robotic wafer transfer.