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During the past few years, our business absorbed and digested state-of-the-art technologies the two at home and abroad. Meanwhile, our firm staffs a group of experts devoted to your development of Substrat Wafer,Sic Susceptor,Susceptor CVD,CVD Susceptor,Planetary Carrier, We've been devoted to offer professional purification technology and methods in your case!
Substrat Wafer, Our continual availability of high grade products in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. welcome new and old customers from all walks of life to contact us for future business relationships and mutual success!

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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