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  • SiC Tubes

    SiC Tubes

    Semicorex SiC Tubes are silicon carbide furnace tubes designed for semiconductor high-temperature processes, with excellent thermal stability and chemical corrosion resistance. Choosing Semicorex high-purity raw materials, precision manufacturing processes and long-term reliability guarantees to provide solid support for your semiconductor manufacturing process.*
  • Quartz Injector

    Quartz Injector

    Semicorex Quartz Injector stands as a pivotal component within the intricate realm of semiconductor manufacturing. As an indispensable apparatus, it facilitates the precise delivery of essential materials and gases vital for the fabrication of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Crucible

    Quartz Crucible

    Semicorex quartz crucible is designed for use in the single-crystal growth of semiconductor materials, ensuring optimal performance and crystal quality. Choose Semicorex for our superior craftsmanship, precision engineering, and commitment to delivering products that meet the highest industry standards.*
  • Alumina Ceramic Flanges

    Alumina Ceramic Flanges

    Alumina Ceramic Flanges are engineered components that offer substantial benefits, particularly in settings where thermal stability, weight considerations, and corrosion resistance are of paramount importance. These flanges are not only durable and reliable but also contribute to the overall efficiency and cost-effectiveness of the systems in which they are employed. Their unique properties make them an excellent choice for advanced engineering solutions in various industrial sectors.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Flanges that fuse quality with cost-efficiency.**
  • SiC Process Tube Liners

    SiC Process Tube Liners

    Semicorex SiC (Silicon Carbide) Process Tube Liners are crucial components in the production of semiconductors within environments that require high temperatures and high levels of purity. These SiC Process Tube Liners are specifically designed to endure extreme thermal conditions and maintain high levels of purity to ensure that the semiconductor manufacturing process is not compromised. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    Semicorex Tantalum Carbide Ring is a graphite ring coated with tantalum carbide, used as a guide ring in silicon carbide crystal growth furnaces to ensure precise temperature and gas flow control. Choose Semicorex for its advanced coating technology and high-quality materials, delivering durable and reliable components that enhance crystal growth efficiency and product lifespan.*
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  • Reviews

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Intrinsic Silicon

    Intrinsic silicon refers to pure silicon that is free from impurities.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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