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China Planetary Carrier Manufacturers, Suppliers, Factory

With our loaded working experience and thoughtful products and services, we've got been acknowledged as a reputable supplier for most international buyers for Planetary Carrier,Sic Susceptor,Susceptor CVD,CVD Susceptor,Substrat Wafer, Accurate process devices, Advanced Injection Molding Equipment, Equipment assembly line, labs and software progress are our distinguishing feature.
Planetary Carrier, As an experienced manufacturer we also accept customized order and we could make it the same as your picture or sample specification. The main goal of our company is to live a satisfactory memory to all the customers, and establish a long term business relationship with buyers and users all over the world.

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    Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
  • CVD shower head with SiC Coat

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    Semicorex CVD shower head with SiC Coat represents an advanced component engineered for precision in industrial applications, notably within the realms of chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD). Serving as a critical conduit for the delivery of precursor gases or reactive species, this specialized CVD shower head with SiC Coat facilitates the precise deposition of materials onto a substrate’s surface, integral to these sophisticated manufacturing processes.
  • Carbon Carbon Composites

    Carbon Carbon Composites

    Semicorex Carbon Carbon Composites are advanced materials that offer exceptional lightweight strength, high thermal conductivity, and remarkable resistance to harsh conditions. Choose Semicorex for our unparalleled quality and innovative engineering, ensuring you receive reliable and high-performance solutions tailored to your specific needs.*
  • 3C-SiC Wafer Substrate

    3C-SiC Wafer Substrate

    Semicorex 3C-SiC wafer substrate is made of SiC with cubic crystal. We have been manufacturer and supplier of semiconductor wafers for many years. We look forward to becoming your long-term partner in China.
  • SiC Coating Flat Part

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    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • SiC Coated Wafer Susceptors

    SiC Coated Wafer Susceptors

    Semicorex SiC Coated Wafer Susceptors are high-performance carrier designed specifically for ultrathin film deposition under pressureless conditions. With advanced materials engineering, precision porosity control, and robust SiC coating technology, Semicorex delivers industry-leading reliability and customization to meet the evolving needs of next-generation semiconductor manufacturing.*
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    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

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  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

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    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

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