English
Home > Products > Silicon Wafer Etching Tray

China Silicon Wafer Etching Tray Manufacturers, Suppliers, Factory

We normally believe that one's character decides products' quality, the details decides products' high-quality ,while using the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for Silicon Wafer Etching Tray,Etch Carrier(ICP/PSS),Tray for LED,Carrier Plate for PSS Etching,PSS Fabricated by Dry Etching, We have now confident that we can easily offer the premium quality products and solutions at resonable price, good after-sales services into the buyers. And we're going to produce a dazzling future.
Silicon Wafer Etching Tray, Since always, we adhering to the "open and fair, share to get, the pursuit of excellence, and creation of value"values, adhere to the"integrity and efficient, trade-oriented, best way , best valve" business philosophy. Together with our all over the world have branches and partners to develop new business areas, maximum common values. We sincerely welcome and together we share in global resources, opening up new career together with the chapter.

Related Products

Hot Products

  • Silicon Carbide Coated Barrel Susceptor

    Silicon Carbide Coated Barrel Susceptor

    Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • Barrel Susceptor Epi System

    Barrel Susceptor Epi System

    Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.
  • Planetary Disk

    Planetary Disk

    Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • Related Blog
  • Reviews

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.Ⅱ)

    In the chemical vapor deposition (CVD) process, the gases used mainly include reactant gases and carrier gases. Reactant gases provide atoms or molecules for the deposited material, while carrier gases are used to dilute and control the reaction environment. Below are some commonly used CVD gases:

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept