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China Silicon Wafer Etching Tray Manufacturers, Suppliers, Factory

We normally believe that one's character decides products' quality, the details decides products' high-quality ,while using the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for Silicon Wafer Etching Tray,Etch Carrier(ICP/PSS),Tray for LED,Carrier Plate for PSS Etching,PSS Fabricated by Dry Etching, We have now confident that we can easily offer the premium quality products and solutions at resonable price, good after-sales services into the buyers. And we're going to produce a dazzling future.
Silicon Wafer Etching Tray, Since always, we adhering to the "open and fair, share to get, the pursuit of excellence, and creation of value"values, adhere to the"integrity and efficient, trade-oriented, best way , best valve" business philosophy. Together with our all over the world have branches and partners to develop new business areas, maximum common values. We sincerely welcome and together we share in global resources, opening up new career together with the chapter.

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    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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    the Epitaxial Single-crystal Si Plate encapsulates the zenith of refinement, durability, and dependability for applications pertaining to graphite epitaxy and wafer manipulation. It is distinguished by its density, planarity, and thermal management capabilities, positioning it as the optimal selection for rigorous operational conditions. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
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  • SiC-Coated Graphite Wafer Susceptors

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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