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Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

According to processing method, use, and appearance, quartz glass is classified into two categories: transparent and opaque. The transparent category includes types such as fused transparent quartz glass, fused quartz glass, gas-refined transparent quartz glass, and synthetic quartz glass.

When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.