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  • PV-use SiC boats

    PV-use SiC boats

    Semicorex PV-use SiC boats are high temperature resistant containers, specifically used to hold and transport silicon wafers throughout the photovoltaic cell production process. Semicorex, your ideal choice.
  • SiC Fingers

    SiC Fingers

    Semicorex SiC Fingers are precision-engineered components made from high-purity silicon carbide, designed to perform under the extreme demands of semiconductor manufacturing. Choosing Semicorex means access to advanced material expertise, high-precision processing, and reliable solutions trusted in critical wafer handling applications.*
  • Fused Quartz Crucible

    Fused Quartz Crucible

    Premium Fused Quartz Crucible, meticulously crafted from semiconductor-grade quartz to meet the exacting standards of the semiconductor industry. Engineered for precision and durability, this crucible is an indispensable tool for semiconductor processing, ensuring the utmost reliability in your critical applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC O Ring

    SiC O Ring

    Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
  • Quartz Diffusion Boat

    Quartz Diffusion Boat

    Semicorex Quartz Diffusion Boat, also referred to as quartz carrier or quartz wafer boat, is specifically designed to hold semiconductor wafers during critical processes such as chemical vapor deposition (CVD), thermal oxidation, and annealing.**
  • Quartz Melting Pot

    Quartz Melting Pot

    Semicorex quartz melting pot is a high-temperature resistant container made of high-purity quartz. It is mainly used in the semiconductor and photovoltaic industries to hold silicon melt liquid during the silicon single crystal pulling process. Semicorex has excellent technology, precise engineering design and customized services. Please choose Semicorex to be your reliable long term partner.
  • Related Blog
  • Reviews

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is SOI

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

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