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    If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
  • RTP RTA SiC Coated Carrier

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

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  • SiC Lid

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  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • What is CVD for SiC

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    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

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