SICOI Wafer

SICOI wafer is a composite semiconductor material with a three-layer structure that is made using a unique method.

The bottom layer of the SICOI wafer’s structure is silicon substrate, which provides reliable mechanical support to ensure the structural stability of SICOI wafer. Its optimal thermal conductivity reduces the impact of heat accumulation on the performance of semiconductor devices, enabling them to operate normally for a long time even at high power. Additionally, silicon substrate is compatible with the equipment and machinery used in semiconductor manufacturing currently. This successfully lowers manufacturing costs and complexity while accelerating product R&D and mass production.

Located between the silicon substrate and the SiC device layer, insulating oxide layer is the middle layer of SICOI wafer. By isolating current paths between the upper and lower layers, insulating oxide layer effectively lowers the risk of short circuits and guarantees the stable electrical performance of semiconductor devices. Due to its low absorption characteristic, it can significantly reduce optical scattering and improve the optical signal transmission efficiency of semiconductor devices.

Silicon Carbide device layer is the fundamental functional layer of the SICOI wafer’s structure. It is essential for achieving high-performance electronic, photonic, and quantum functions due to its exceptional mechanical strength, high refractive index, low optical loss, and remarkable thermal conductivity.

The applications of SICOI wafers:

1.For manufacturing nonlinear optical device like optical frequency comb.

2.For manufacturing integrated photonic chips.

3.For manufacturing electro-optic modulator

4.For manufacturing power electronics devices,such as power switches and RF devices.

5.For manufacturing MEMS sensor like accelerometer and gyroscope.