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    Semicorex Half Parts for SiC Epitaxial Equipment, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of SiC wafer epitaxy. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Semiconductor Quartz Bell Jar

    Semiconductor Quartz Bell Jar

    Semicorex Semiconductor Quartz Bell Jar is a specialized vessel constructed from high-purity quartz material. Its design is tailored to meet the stringent requirements of semiconductor manufacturing processes, where purity and cleanliness are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Process Tube Liners

    SiC Process Tube Liners

    Semicorex SiC (Silicon Carbide) Process Tube Liners are crucial components in the production of semiconductors within environments that require high temperatures and high levels of purity. These SiC Process Tube Liners are specifically designed to endure extreme thermal conditions and maintain high levels of purity to ensure that the semiconductor manufacturing process is not compromised. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Flexible Graphite Foil

    Flexible Graphite Foil

    Semicorex Flexible Graphite Foil is a high performance, flexible material designed for sealing and gasketing applications. When you choose a Semicorex product, you get superior quality and reliability, ensuring your most stringent industry standards are met.*
  • Tantalum Carbide Coated Porous Graphite

    Tantalum Carbide Coated Porous Graphite

    Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Susceptor Plate

    Susceptor Plate

    Semicorex Susceptor Plate is a crucial component in the epitaxial growth process, specifically designed to carry semiconductor wafers during the deposition of thin films or layers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • How is Silicon Carbide Manufactured?

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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