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SiC Elements, As the world economic integration bringing challenges and opportunities to the xxx industry, our company , by carrying on our teamwork, quality first, innovation and mutual benefit, are confident enough to offer our clients sincerely with qualified solutions, competitive price and great service, and to build a brighter future under the spirit of higher, faster, stronger with our friends together by carrying on our discipline.

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  • MOCVD Susceptor for Epitaxial Growth

    MOCVD Susceptor for Epitaxial Growth

    Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
  • MOCVD Wafer Carriers for Semiconductor Industry

    MOCVD Wafer Carriers for Semiconductor Industry

    Semicorex MOCVD Wafer Carriers for Semiconductor Industry is a top-of-the-line carrier designed for use in the semiconductor industry. Its high-purity material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • Tantalum Carbide Coated Porous Graphite

    Tantalum Carbide Coated Porous Graphite

    Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC-Coated Epitaxial Susceptors

    SiC-Coated Epitaxial Susceptors

    Semicorex SiC-coated epitaxial susceptors are the essential components used in the semiconductor epitaxial growth process to stably support and fix the semiconductor wafers. Leveraging mature manufacturing capabilities and state-of-the-art production technologies, Semicorex is committed to supplying market-leading quality and competitively priced SiC-coated epitaxial susceptors for our valued customers.
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

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