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    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates is a high-performance material known for its thermal stability, mechanical strength, electrical insulation, corrosion resistance, and dielectric properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Vertical Wafer Boat

    Vertical Wafer Boat

    Semicorex Vertical Wafer Boat represents a crucial component within semiconductor processing, designed to securely house and transport delicate silicon wafers throughout various stages of fabrication. Crafted from Silicon Carbide (SiC), a robust and thermally stable material renowned for its exceptional properties in harsh environments, these boats ensure the integrity and safety of wafers during processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Guide Ring

    TaC Coating Guide Ring

    Semicorex TaC Coating Guide Ring serves as a paramount part within metal-organic chemical vapor deposition (MOCVD) equipment, ensuring the precise and stable delivery of precursor gases during the epitaxial growth process. The TaC Coating Guide Ring represents a series of properties that make it ideal for withstanding the extreme conditions found within the MOCVD reactor chamber.**
  • PAN based Carbon Felt

    PAN based Carbon Felt

    Semicorex PAN Based Carbon Felt is a lightweight, high-performance insulation material designed for high-temperature environments. Choose Semicorex for our expertise in delivering customized, reliable solutions that enhance the efficiency and longevity of your industrial processes.*
  • Silicon Carbide Chucks

    Silicon Carbide Chucks

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  • Reviews

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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