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"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Ceramic Wafer,Silicon Carbide,Etching Machine,SiC ceramic,Semiconductor Devices, Adhering into the business enterprise philosophy of 'customer initial, forge ahead', we sincerely welcome purchasers from at your home and abroad to cooperate with us.
Ceramic Wafer, "Create Values,Serving Customer!" is the aim we pursue. We sincerely hope that all customers will establish long term and mutually beneficial cooperation with us.If you wish to get more details about our company, Be sure to contact with us now!

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  • RTP RTA SiC Coated Carrier

    RTP RTA SiC Coated Carrier

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Ceramic Seal Part

    SiC Ceramic Seal Part

    Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
  • Flexible Graphite Foil

    Flexible Graphite Foil

    Semicorex Flexible Graphite Foil is a high performance, flexible material designed for sealing and gasketing applications. When you choose a Semicorex product, you get superior quality and reliability, ensuring your most stringent industry standards are met.*
  • Graphite Crucibles

    Graphite Crucibles

    Semicorex graphite crucibles engineered for exceptional thermal stability and contamination control in semiconductor crystal growth processes. Choose our graphite crucibles for unmatched purity, performance, and reliability in semiconductor crystal growth. *
  • Silicon Electrodes

    Silicon Electrodes

    Semicorex Silicon electrodes are high-performance components that combine efficient electrical conduction with precise gas distribution capabilities. Choosing Semicorex means partnering with a trusted expert who delivers superior quality, advanced manufacturing techniques, and reliable, customizable silicon electrode solutions tailored to your specific needs.*
  • Al2O3 Vacuum Chucks

    Al2O3 Vacuum Chucks

    Semicorex Al2O3 Vacuum Chucks are microporous ceramic adsorption fixture made from black alumina with a porosity of 35–40%, specifically designed for wafer handling in semiconductor applications. Choosing Semicorex means benefiting from advanced ceramic technology, precision engineering, and reliable product quality that ensure stable performance in demanding cleanroom environments.*
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • MOCVD is the key equipment

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

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