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Ceramic Wafer Processing, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which might be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we will continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

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    Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • Epitaxial Single-crystal Si Plate

    Epitaxial Single-crystal Si Plate

    the Epitaxial Single-crystal Si Plate encapsulates the zenith of refinement, durability, and dependability for applications pertaining to graphite epitaxy and wafer manipulation. It is distinguished by its density, planarity, and thermal management capabilities, positioning it as the optimal selection for rigorous operational conditions. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Epitaxy Wafer Carrier

    Epitaxy Wafer Carrier

    Semicorex Epitaxy Wafer Carrier provides a highly reliable solution for Epitaxy applications.The advanced materials and coating technology ensure that these carriers deliver outstanding performance, reducing operational costs and downtime due to maintenance or replacement.**
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
  • 8 inch EPI Bottom Ring

    8 inch EPI Bottom Ring

    Semicorex 8 inch EPI Bottom Ring is a robust SiC coated graphite component essential for epitaxial wafer processing. Choose Semicorex for unmatched material purity, coating precision, and reliable performance in every production cycle.*
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

  • Carbon Fiber Modification

    Improving the compatibility between carbon fiber and the matrix: Enhancing the mechanical properties of composite materials and strengthening the mechanical interlocking, physical adhesion, and chemical bonding between the fiber surface and the matrix.

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