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Semiconductor Devices, With the enterprising spirit of"" high efficiency, convenience, practicality and innovation"", and in line with such serving guidance of ""good quality but better price, "" and ""global credit"", we're striving to cooperate with the automobile parts companies all over the world to make a win-win partnership.

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  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Wafer Cassette Box

    Wafer Cassette Box

    Semicorex Wafer Cassette Box is a PFA fluoroplastic cassette with a large opening area, designed to improve wafer washing and drying performance in semiconductor manufacturing. Choose Semicorex for its proven track record of delivering high-quality, durable, and chemically resistant wafer handling solutions.*
  • SOI Wafer

    SOI Wafer

    Semicorex SOI Wafer is a high-performance semiconductor substrate that features a thin silicon layer atop an insulating material, optimizing device efficiency, speed, and power consumption. With customizable options, advanced manufacturing techniques, and a focus on quality, Semicorex provides SOI wafers that ensure superior performance and reliability for a wide range of cutting-edge applications.*
  • Silicon Carbide Liner

    Silicon Carbide Liner

    Semicorex Silicon Carbide Liner is a versatile and robust material that serves as an invaluable asset in optimizing the efficiency and longevity of industrial processing equipment.
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

    Semicorex SiC Coated Wafer Carriers are high-purity graphite susceptors coated with CVD silicon carbide, designed for optimal wafer support during high-temperature semiconductor processes. Choose Semicorex for unmatched coating quality, precision manufacturing, and proven reliability trusted by leading semiconductor fabs worldwide.*
  • Alumina Ceramic End Effector

    Alumina Ceramic End Effector

    Semicorex Alumina Ceramic End Effector is a precision-engineered component specifically designed for reliable and contamination-free wafer handling in semiconductor manufacturing and related applications.*
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  • Reviews

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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