English
Home > Products > Aluminum Nitride Ceramics;

China Aluminum Nitride Ceramics; Manufacturers, Suppliers, Factory

We have a highly efficient team to deal with inquiries from customers. Our goal is "100% customer satisfaction by our product quality, price & our team service" and enjoy a good reputation among clients. With many factories, we can provide a wide range of Aluminum Nitride Ceramics;,ESC;,wafer E-chuck;,electrostatic chuck semiconductor;,Ceramic Suction Cup;, As an experienced group we also accept custom-made orders. The main intention of our firm is to build up a satisfying memory for all consumers, and set up a long-term win-win small business connection.
Aluminum Nitride Ceramics;, "Create Values,Serving Customer!" is the aim we pursue. We sincerely hope that all customers will establish long term and mutually beneficial cooperation with us.If you wish to get more details about our company, Please contact with us now!

Related Products

Hot Products

  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

    Semicorex 8-inch Waferholder Rings are designed to provide precise wafer fixation and exceptional performance in aggressive thermal and chemical environments. Semicorex delivers application-specific engineering, tight dimensional control, and consistent SiC coating quality to meet the rigorous demands of advanced semiconductor processing.*
  • SiC Seal Ring

    SiC Seal Ring

    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • High-purity Graphite Powder

    High-purity Graphite Powder

    Semicorex High-purity graphite powder is a critical material in the semiconductor industry, particularly in the crystal growth process, where it plays a vital role in enabling high-quality, efficient, and precise production. Semicorex delivers high-purity graphite powder with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • Liquid Phase Epitaxy (LPE) Reactor System

    Liquid Phase Epitaxy (LPE) Reactor System

    Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • PBN Heater Chucks

    PBN Heater Chucks

    Semicorex PBN Heater Chucks, crafted from Boron Nitride ceramic, stand at the forefront of cutting-edge thermal management solutions. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • What are the characteristics of black alumina ceramics

    Black alumina, thanks to its unique light-blocking property, durability, electrical insulation, low density, high air tightness and chemical stability, has become a key material in high-end fields such as semiconductors, optics and aerospace, especially irreplaceable in scenarios that are sensitive to light or have high reliability requirements.

  • MOCVD is the key equipment

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept