China Sic Wafer Process Manufacturers, Suppliers, Factory

If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.

SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*

Semicorex SiC Carrier for ICP is a high-performance wafer holder made of SiC-coated graphite, designed specifically for use in inductively coupled plasma (ICP) etching and deposition systems. Choose Semicorex for our world-leading anisotropic graphite quality, precision small-batch manufacturing, and uncompromising commitment to purity, consistency, and process performance.*

Semicorex 8 inch EPI Bottom Ring is a robust SiC coated graphite component essential for epitaxial wafer processing. Choose Semicorex for unmatched material purity, coating precision, and reliable performance in every production cycle.*

Semicorex SiC Heating Filament is a silicon carbide coated graphite heater designed for wafer heating in advanced semiconductor manufacturing. Choosing Semicorex means selecting a trusted partner that delivers high-purity materials, precision customization, and long-lasting performance for the most demanding thermal processes.*

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.