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    SiC Robot Arm

    Semicorex SiC Robot Arm is a high-performance silicon carbide ceramic robotic arm designed for precision and durability in semiconductor manufacturing processes. Choose Semicorex for our expertise in delivering innovative, reliable, and high-quality solutions tailored to the semiconductor industry's needs.*
  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • SiC Vacuum Chuck

    SiC Vacuum Chuck

    Semicorex SiC Vacuum Chuck represents a pinnacle of precision engineering tailored for the demanding semiconductor industry. Crafted from graphite substrates and enhanced through state-of-the-art Chemical Vapor Deposition (CVD) techniques, this innovative device seamlessly integrates the unparalleled properties of Silicon Carbide (SiC) coating. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous SiC Vacuum Chuck

    Porous SiC Vacuum Chuck

    Semicorex Porous SiC Vacuum Chuck is designed for precise and reliable wafer handling, offering customizable material options to meet a wide range of semiconductor processing needs. Choose Semicorex for its commitment to high-quality, durable solutions that deliver optimal performance and efficiency in every application.*
  • MOCVD Susceptor with TaC Coating

    MOCVD Susceptor with TaC Coating

    Semicorex MOCVD Susceptor with TaC Coating is a cutting-edge component meticulously crafted for optimum performance in semiconductor epitaxy processes within MOCVD systems. Semicorex is unwavering in our commitment to delivering superior products at highly competitive prices. We are eager to establish a lasting partnership with you in China.*
  • P-type SiC Substrate Wafer

    P-type SiC Substrate Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our P-type SiC Substrate Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Silicon Nitride Ceramic Substrate

    Silicon Nitride Ceramic Substrate is a high-performance ceramic substrate made of silicon nitride (Si₃N₄) as the core material. Its main components are silicon (Si) and nitrogen (N) elements, which are chemically bonded to form Si₃N₄.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Korean memory chips plummeted

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