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    Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
  • MOCVD Planet Susceptor for Semiconductor

    MOCVD Planet Susceptor for Semiconductor

    Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
  • TaC Coated Plate

    TaC Coated Plate

    Semicorex TaC Coated Plate is a specialized disc designed for use in SiC epitaxial processes, crafted with precision from high-quality graphite material. Its surface is meticulously coated with tantalum carbide (TaC), a compound known for its exceptional purity and strength. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • Graphite Carrier for Epitaxial Reactors

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    Semicorex Graphite Carrier for Epitaxial Reactors is a SiC coated graphite component with precision micro-holes for gas flow, optimized for high-performance epitaxial deposition. Choose Semicorex for superior coating technology, customization flexibility, and industry-trusted quality.*
  • Semiconductor Quartz Crucibles

    Semiconductor Quartz Crucibles

    Semicorex Semiconductor Quartz Crucibles are high-purity fused quartz containers engineered for the demanding silicon single crystal pulling process in semiconductor manufacturing. Choosing Semicorex means benefiting from advanced multi-layer crucible technology, exceptional material purity, and stringent quality control that ensure superior crystal quality and consistent production performance.*
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  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

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