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  • SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
  • Porous Graphite Crucible

    Porous Graphite Crucible

    Semicorex provide high-quality porous graphite crucible with customized service, our porous graphite material is top-notch quality with high specifications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Ceramic Seal Part

    SiC Ceramic Seal Part

    Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
  • Al2O3 Substrate

    Al2O3 Substrate

    Semicorex proudly presents the Al2O3 Substrate, a versatile and high-performance material crafted from high-purity aluminum oxide (alumina). This advanced ceramic substrate is lauded for its exceptional properties, making it a cornerstone in various high-tech industries, including electronics, optoelectronics, and solid oxide fuel cells.**
  • Teflon Cassette

    Teflon Cassette

    Semicorex Teflon Cassette is a high-performance carrier designed for the efficient handling and cleaning of wafers in semiconductor, photovoltaic, and electronics industries. Choose Semicorex for our reliable, durable, and cost-effective solutions that ensure optimal wafer quality and long-lasting performance throughout the manufacturing process.*
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Semicorex SiC Cantilever Paddles are high-performance silicon carbide cantilever paddles used in semiconductor thermal processing equipment, designed for stable wafer handling in high-temperature environments. Choosing Semicorex means choosing high-purity materials, excellent thermal stability and industry-leading precision manufacturing technology to ensure that every critical process of yours is stable and reliable.*
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

    Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

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