Wafer Carrier Semiconductor

Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Semiconductor for many years. Our Wafer Carrier Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semiconductor deposition processes use a combination of volatile precursor gases, plasma, and high temperature to layer high quality thin films onto wafers. Deposition chambers and wafer handling tools need durable ceramic components to stand up to these challenging environments. Semicorex Wafer Carrier Semiconductor is high-purity silicon carbide, which has high corrosion and heat resistance properties as well as excellent thermal conductivity.
Contact us today to learn more about our Wafer Carrier Semiconductor.

Parameters of Wafer Carrier Semiconductor

Technical Properties
Index	Unit	Value
Material Name		Reaction Sintered Silicon Carbide	Pressureless Sintered Silicon Carbide	Recrystallized Silicon Carbide
Composition		RBSiC	SSiC	R-SiC
Bulk Density	g/cm3	3	3.15 ± 0.03	2.60-2.70
Flexural Strength	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Compressive Strength	MPa (kpsi)	1120(158)	3970(560)	> 600
Hardness	Knoop	2700	2800	/
Breaking Tenacity	MPa m1/2	4.5	4	/
Thermal Conductivity	W/m.k	95	120	23
Coefficient of Thermal Expansion	10^-6.1/°C	5	4	4.7
Specific Heat	Joule/g 0k	0.8	0.67	/
Max temperature in air	℃	1200	1500	1600
Elastic Modulus	Gpa	360	410	240

The difference between SSiC and RBSiC:

1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.

2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.

3. Different used time under different PH and temperature, SSiC is longer than RBSiC

Features of Wafer Carrier Semiconductor

- Lower wavelength deviation and higher chip yields
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- Tighter dimensional tolerances lead to higher product yield and lower costs
- High-purity graphite and SiC coating for pinhole resistance and higher lifetime

Available shapes of silicon carbide ceramics：

● Ceramic rod / ceramic pin / ceramic plunger

● Ceramic tube / ceramic bushing / ceramic sleeve

● Ceramic ring / ceramic washer / ceramic spacer

● Ceramic disc

● Ceramic plate / ceramic block

● Ceramic ball

● Ceramic piston

● Ceramic nozzle

● Ceramic crucible

● Other custom ceramic parts