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Our growth depends to the superior products ,great talents and repeatedly strengthened technology forces for sic epi,sic epitaxy,silicon carbide epitaxy,lpe sic epitaxy,sic epi wafer, We have been not pleased while using the present achievements but we're trying finest to innovate to satisfy buyer's more personalized needs. No matter where you are from, we're here to wait for your type request, and welcom to visit our manufacturing unit. Choose us, you can satisfy your dependable supplier.
sic epi, In order to make more people know our items and to enlarge our market, we've got devoted a lot of attention to technical innovations and improvement, as well as replacement of equipment. Last but not the least, we also pay more attention to training our managerial personnel, technicians and workers in planned way.

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  • Diffusion Tube

    Diffusion Tube

    Semicorex cutting-edge Diffusion Tube, crafted from high-quality semiconductor grade quartz—a pinnacle in semiconductor processing technology. Engineered to precision, this indispensable component redefines the standards of diffusion processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Aluminum Nitride Wafer Holder

    Aluminum Nitride Wafer Holder

    You can rest assured to buy Aluminum Nitride Wafer Holder from our factory. Semicorex Aluminum Nitride (AlN) Wafer Holder stands as an indispensable component within the realm of semiconductor processing, serving as a pivotal platform for securely holding delicate wafers throughout various stages of fabrication. Crafted from high-quality aluminum nitride material, renowned for its exceptional thermal conductivity, mechanical strength, and electrical insulation properties, this wafer holder ensures optimal conditions for precise and efficient semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Cleaning Tank

    Quartz Cleaning Tank

    Semicorex Quartz Cleaning Tank stands as a pinnacle in semiconductor processing, meticulously engineered to ensure the pristine purity essential for the delicate task of wafer cleaning. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Horizontal SiC Wafer Boat

    Horizontal SiC Wafer Boat

    Semicorex Horizontal SiC Wafer Boat has emerged as an indispensable tool in the production of high-performance semiconductor and photovoltaic devices. These specialized carriers, meticulously engineered from high-purity silicon carbide (SiC), offer exceptional thermal, chemical, and mechanical properties essential for the demanding processes involved in fabricating cutting-edge electronic components.**
  • Semiconductor Quartz Crucibles

    Semiconductor Quartz Crucibles

    Semicorex Semiconductor Quartz Crucibles are high-purity fused quartz containers engineered for the demanding silicon single crystal pulling process in semiconductor manufacturing. Choosing Semicorex means benefiting from advanced multi-layer crucible technology, exceptional material purity, and stringent quality control that ensure superior crystal quality and consistent production performance.*
  • PFA Wafer Cassettes

    PFA Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-purity carriers designed to ensure safe and contamination-free handling of semiconductor wafers during wet processing, storage, and transport. Choosing Semicorex guarantees not only superior PFA material quality but also precision engineering that delivers reliability, cleanliness, and long-term performance in advanced fabrication environments.*
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  • Reviews

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

    Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

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