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Our growth depends to the superior products ,great talents and repeatedly strengthened technology forces for sic epi,sic epitaxy,silicon carbide epitaxy,lpe sic epitaxy,sic epi wafer, We have been not pleased while using the present achievements but we're trying finest to innovate to satisfy buyer's more personalized needs. No matter where you are from, we're here to wait for your type request, and welcom to visit our manufacturing unit. Choose us, you can satisfy your dependable supplier.
sic epi, In order to make more people know our items and to enlarge our market, we've got devoted a lot of attention to technical innovations and improvement, as well as replacement of equipment. Last but not the least, we also pay more attention to training our managerial personnel, technicians and workers in planned way.

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  • Susceptors for MOCVD Reactors

    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • Semiconductor Wafer Chuck

    Semiconductor Wafer Chuck

    Semicorex advanced, high-purity Silicon Carbide Coated Components are built to withstand the extreme environments in wafer handling process. Our Semiconductor Wafer Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Quartz Fin Pedestal

    Quartz Fin Pedestal

    Semicorex Semicorex Quartz Fin Pedestal, the indispensable component for enhancing stability and maneuverability in pedestal boats. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • High-purity Carbon Powder

    High-purity Carbon Powder

    Semicorex High-purity Carbon Powder serves as a crucial precursor in the synthesis of high-purity silicon carbide (SiC) powder and other solid-state carbide materials. It ensures the purity and quality required for advanced applications in the semiconductor, electronics, and ceramics industries. We at Semicorex are dedicated to manufacturing and supplying high-performance High-purity Carbon Powder that fuse quality with cost-efficiency.**
  • SiC Fingers

    SiC Fingers

    Semicorex SiC Fingers are precision-engineered components made from high-purity silicon carbide, designed to perform under the extreme demands of semiconductor manufacturing. Choosing Semicorex means access to advanced material expertise, high-precision processing, and reliable solutions trusted in critical wafer handling applications.*
  • Related Blog
  • Reviews

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

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