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With our rich working experience and thoughtful companies, we have now been recognized as being a trustworthy supplier for a lot of global potential buyers for Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Graphite Trays,SiC Coating Of Semiconductor,Barrel Single Wafer, We wholeheartedly welcome consumers all over the entire world appear to go to our manufacturing unit and have a win-win cooperation with us!
Carrier SIC Epitaxy, We can meet the various needs of customers at home and abroad. We welcome new and old customers to come to consult & negotiate with us. Your satisfaction is our motivation! Let us work together to write a brilliant new chapter!

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    Semicorex CCB Brakes (Carbon-Ceramic Brakes with Coated Friction Layer) represent the next generation of high-performance braking solutions, engineered for extreme durability, thermal stability, and consistent braking under the most demanding conditions. Choose Semicorex for its expertise in advanced ceramic composites and precision-engineered coating technologies.*
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    Alumina Ceramic Robotic Arm

    Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
  • Graphite Foil Roll

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    Semicorex Graphite Foil Roll is an advanced material made from expanded natural graphite, designed to meet the precise demands of high-temperature applications. With resilience, chemical inertness, and superior thermal properties, this product stands out as an essential component in various industries including semiconductor, solar, and ceramics.**
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    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
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  • What is the difference between arsenic doping and phosphorus doping in single crystal Silicon

    Both are N-type semiconductors, but what's the difference between arsenic and phosphorus doping in single-crystal silicon? In single-crystal silicon, arsenic (As) and phosphorus (P) are both commonly used N-type dopants (pentavalent elements that provide free electrons). However, due to differences in atomic structure, physical properties, and processing characteristics, their doping effects and application scenarios differ significantly.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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