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  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • SiC Boat for Wafer Handling

    SiC Boat for Wafer Handling

    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • Tantalum Carbide Rings

    Tantalum Carbide Rings

    Semicorex Tantalum Carbide rings are critical components used in advanced semiconductor manufacturing processes. Known for their exceptional hardness, high melting point, and chemical inertness, At Semicorex, we are dedicated to delivering products that meet the highest standards of quality and performance, ensuring that our clients remain at the forefront of innovation in the semiconductor industry.*
  • SiC Steering Mirror

    SiC Steering Mirror

    Semicorex SiC Steering Mirror is a remarkable material that combines durability, resilience, and exceptional optical performance, making it indispensable in advanced optical systems across various high-tech industries.
  • TaC coated seed crystal holder

    TaC coated seed crystal holder

    TaC coated seed crystal holder is a high-performance component specifically designed for the growth environment of semiconductor materials. As a leading manufacturer of TTaC coated seed crystal holders, semicorex offers you efficient core component solutions in the high-end semiconductor manufacturing field.
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  • Funds on Semiconductor projects

    Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

  • What is SOI

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Knowing MOCVD

    MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

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cvd epitaxy;epitaxy;density graphite;cvd sic coating;sic epitaxy equipment;gan on sic;gan on silicon;wafer carrier;MOCVD;epitaxial wafer

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