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sic epi wafers, Our Company has specialist engineers and technical staff to answer your questions about maintenance problems, some common failure. Our product quality assurance, price concessions, any questions about the products, You should feel free to contact us.

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    Semicorex High Purity Quartz Crucible meticulously crafted from high-purity quartz, is essential for extracting single-crystal silicon—an indispensable component in modern electronics and renewable energy technologies.**
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    Semicorex Carbon Carbon Composites are advanced materials that offer exceptional lightweight strength, high thermal conductivity, and remarkable resistance to harsh conditions. Choose Semicorex for our unparalleled quality and innovative engineering, ensuring you receive reliable and high-performance solutions tailored to your specific needs.*
  • Silicon Carbide Mechanical Seal

    Silicon Carbide Mechanical Seal

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Silicon Carbide Mechanical Seal has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Vacuum Chuck

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated components in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Ceramic Bushing has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

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    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

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