SiC Epi Wafers

Semicorex SiC Epi Wafers are the wafers with a layer of SiC single crystal film grown on the surface of the substrate by chemical vapor deposition (CVD). Its doping type, doping concentration and thickness can be precisely controlled according to the device design requirements. It is the core component of the device functional area.

Key characteristics of SiC Epi Wafers

The performance of epitaxial wafers is determined by the following characteristics:

Doping charactertics:

SiC Epi Wafers achieve the required electrical properties by precisely controlling the doping concentration (n-type or p-type), and concentration uniformity is a key indicator.

Thickness control:

According to the device design requirements, the thickness of the epitaxial layer can range from a few microns to tens of microns. For example, high-voltage devices require thicker epitaxial layers to support higher breakdown voltages.

Surface quality:

The surface flatness of the epitaxial layer directly affects the manufacturing accuracy of the device. Nanoscale surface roughness and low defect density are key requirements for epitaxial wafers.

Main preparation process of SiC Epi Wafers

The production of epitaxial wafers are mainly achieved through CVD technology. The carbon source and silicon source gases react at high temperature and are deposited on the substrate surface to form an epitaxial layer.

Influence of process parameters:

Temperature, gas flow, atmosphere and other factors directly affect the thickness, doping uniformity and surface quality of the epitaxial layer.

The core role of SiC Epi Wafers

Epitaxial wafers play a decisive role in SiC devices: As an active area: provide the required electrical properties, such as the formation of current channels or PN junctions. Determine device performance: such as key parameters such as breakdown voltage and on-resistance.

Applications in multiple fields of SiC Epi Wafers

New energy vehicles: a dual-boost engine for endurance and performance

As the global automotive industry accelerates its transformation to electrification, the performance optimization of new energy vehicles has become the focus of competition among major automakers. SiC epi wafers play an indispensable role in this. In the core component of new energy vehicles - the motor drive system, power devices based on silicon carbide epitaxial wafers shine. It can achieve higher frequency switching actions, significantly reduce switching losses, and greatly improve the operating efficiency of the motor. This is like injecting a strong source of power into the car, which not only effectively increases the vehicle's cruising range, but also allows the vehicle to perform better under conditions such as acceleration and climbing. For example, after some high-end electric vehicles adopt silicon carbide power modules, the driving range can be increased by 10% - 15%, and the charging time can be greatly shortened, which brings great convenience and better driving experience to users. At the same time, in terms of on-board chargers (OBC) and power conversion systems (DC-DC), the application of silicon carbide epitaxial wafers also makes charging more efficient, smaller in size, and lighter in weight, which helps to optimize the overall structure of the car.

Power electronics: the cornerstone of building a smart and efficient power grid

In the field of power electronics, SiC epi wafers are helping the construction of smart grids to reach new heights. Traditional silicon-based power devices are gradually revealing their limitations in the face of growing demand for power transmission and conversion. Silicon carbide epitaxial wafers, with their excellent high-voltage, high-temperature and high-power characteristics, provide an ideal solution for the upgrading of power equipment. In the power transmission link, silicon carbide power devices can transmit electric energy over long distances with higher efficiency, reducing energy loss during the transmission process, just like paving an unobstructed "highway" for electric energy, greatly improving the power transmission capacity and stability of the power grid. In terms of power conversion and distribution, the use of silicon carbide epitaxial wafers in power electronic transformers, reactive compensation devices and other equipment in substations can more accurately control power parameters, realize intelligent regulation of the power grid, effectively improve the reliability and power quality of the power grid, and ensure a stable and reliable power supply in our daily life and industrial production.