English
Home > Products > sic epi wafer

China sic epi wafer Manufacturers, Suppliers, Factory

Responsible excellent and fantastic credit rating standing are our principles, which will help us at a top-ranking position. Adhering towards the tenet of "quality initial, buyer supreme" for sic epi wafer,sic epitaxy,sic epi,silicon carbide epitaxy,lpe sic epitaxy, Our tenet is evident each of the time: to provide good quality solution at competitive rate to clients throughout the planet. We welcome potential purchasers to call us for OEM and ODM orders.
sic epi wafer, With a wide range, good quality, reasonable prices and stylish designs, our merchandise are extensively used in public placesand other industries. Our products are widely recognized and trusted by users and can meet continuously developing economic and social needs. We welcome new and old customers from all walks of life to contact us for future business relationships and achieving mutual success!

Related Products

Hot Products

  • SiC Wafer Boat

    SiC Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Crucibles for Crystal Growth

    Crucibles for Crystal Growth

    Semicorex Crucibles for Crystal Growth are indispensable in achieving controlled single-crystal growth, fundamental for semiconductor device manufacturing. These crucibles are meticulously designed to fulfill the rigorous standards of the semiconductor sector, ensuring peak performance and efficiency across all applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Crucibles for Crystal Growth that fuse quality with cost-efficiency.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • Graphite Insulation Plate

    Graphite Insulation Plate

    Semicorex Graphite Insulation Plate's unique combination of properties makes it a versatile and indispensable material across a broad spectrum of industries.
  • SiC Edge Ring

    SiC Edge Ring

    Semicorex CVD SiC Edge Ring is a high-performance plasma-facing component designed to enhance etching uniformity and protect wafer edges in semiconductor manufacturing. Choose Semicorex for unmatched material purity, precision engineering, and proven reliability in advanced plasma process environments.*
  • Graphite Crucible

    Graphite Crucible

    Semicorex Graphite Crucible with excellent properties is great applied in the smelting industry. Semicorex supplies high-quality customized products according to customers’ needs.*
  • Related Blog
  • Reviews

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • How is Silicon Carbide Manufactured?

Related Search

SiC Epi Wafersic epi wafers

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept