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  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
  • SiC ICP plate

    SiC ICP plate

    Semicorex SiC ICP plate is an advanced semiconductor component specifically engineered to meet the rigorous demands of modern semiconductor manufacturing processes. This high-performance product is designed with the latest silicon carbide (SiC) material technology, offering unparalleled durability, efficiency, and reliability, making it an essential component in the fabrication of cutting-edge semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • 6 inch SiC Boat

    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • P-type SiC Substrate Wafer

    P-type SiC Substrate Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our P-type SiC Substrate Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Boat for Wafer Handling

    SiC Boat for Wafer Handling

    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
  • Graphite Ring

    Graphite Ring

    Semicorex Graphite Ring's ability to withstand extreme conditions and ease of installation make them an indispensable component in industries such as hydraulics, pneumatics, and heat exchangers.
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

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