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    SiC Process Tube is a tube shape reactor in heat treatment for wafer processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Nitride Disk

    Silicon Nitride Disk

    Semicorex Silicon Nitride Disk represents a pinnacle of material science innovation, combining the exceptional properties of silicon and nitrogen into a versatile and robust disk-shaped form. Crafted through advanced manufacturing processes, this Silicon Nitride Disk embodies high thermal stability, superior mechanical strength, remarkable wear resistance, and excellent chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Epitaxy Component

    Epitaxy Component

    Semicorex Epitaxy Component is a crucial element in the production of high-quality SiC substrates for advanced semiconductor applications, a reliable choice for LPE reactor systems. By selecting Semicorex Epitaxy Component, customers can be confident in their investment and enhance their production capabilities in the competitive semiconductor market.*
  • SiC Ceramic Plate

    SiC Ceramic Plate

    Semicorex SiC Ceramic Plate offers unmatched performance in environments requiring wear resistance, corrosion resistance, and high-temperature stability. This product is designed for use as lining plates and support parts across a variety of demanding applications.
  • Wafer Boats

    Wafer Boats

    Semicorex wafer boats are precision-engineered ceramic carriers designed for high-temperature wafer processing in semiconductor manufacturing. Choose Semicorex for its unmatched material purity, advanced fabrication technology, and commitment to quality that ensures consistent performance in the most demanding cleanroom environments.*
  • Carbon Ceramic Discs

    Carbon Ceramic Discs

    Semicorex Carbon Ceramic Discs are made of an advanced material, and are applied in braking systems in motorbikes, vehicles, and aircraft. Due to the material properties, carbon ceramic discs can significantly increase the lifespan and stability when rapidly running, and relatively strengthen the safety in driving. Semicorex delivers high-quality customized carbon ceramic discs based on customers’ needs.*
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  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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