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  • Barrel Structure for Semiconductor Epitaxial Reactor

    Barrel Structure for Semiconductor Epitaxial Reactor

    With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.
  • TaC Coated Plate

    TaC Coated Plate

    Semicorex TaC Coated Plate is a specialized disc designed for use in SiC epitaxial processes, crafted with precision from high-quality graphite material. Its surface is meticulously coated with tantalum carbide (TaC), a compound known for its exceptional purity and strength. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ultra-Thin Graphite with High Porosity

    Ultra-Thin Graphite with High Porosity

    Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
  • Cassette Handles

    Cassette Handles

    Semicorex Cassette handles made of PFA and PTFE ensure the safe and efficient movement of wafer cassettes in semiconductor processing. Choose Semicorex for high-performance, durable handles that offer superior chemical resistance and thermal stability, ensuring optimal wafer protection and manufacturing efficiency.*
  • Vertical Silicon Boat

    Vertical Silicon Boat

    Semicorex Vertical Silicon Boat is a critical component used in semiconductor manufacturing processes, Semicorex delivers customized vertical Silicon boat with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • Alumina Mounting Base Plates

    Alumina Mounting Base Plates

    Semicorex Alumina Mounting Base Plates are high-performance ceramic component designed for precise wafer handling in semiconductor manufacturing. Its superior strength, insulation, and thermal stability make it ideal for demanding cleanroom automation environments.*
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  • What is the advantage of silicon carbide?

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

  • SiGe in Chip Manufacturing: A Professional News Report

    To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

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