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  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Support Ring

    SiC Coated Support Ring

    Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
  • Planetary Susceptor

    Planetary Susceptor

    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
  • Graphite Carrier for Epitaxial Reactors

    Graphite Carrier for Epitaxial Reactors

    Semicorex Graphite Carrier for Epitaxial Reactors is a SiC coated graphite component with precision micro-holes for gas flow, optimized for high-performance epitaxial deposition. Choose Semicorex for superior coating technology, customization flexibility, and industry-trusted quality.*
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

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