China SiSiC Manufacturers, Suppliers, Factory

The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?