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Semiconductor Wafer Carrier, We adopt advanced production equipment and technology, and perfect testing equipment and methods to ensure our product quality. With our high-level talents, scientific management, excellent teams, and attentive service, our products are favored by domestic and foreign customers. With your support, we will build a better tomorrow!

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    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • High-purity Porous Graphite Material

    High-purity Porous Graphite Material

    As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD SiC Coated Graphite Susceptor

    MOCVD SiC Coated Graphite Susceptor

    Semicorex MOCVD SiC Coated Graphite Susceptor is an advanced and specialized component used in the Metal-Organic Chemical Vapor Deposition process, a crucial technique in the production of semiconductors, optoelectronic devices, and other advanced materials. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Boat for Wafer Handling

    SiC Boat for Wafer Handling

    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
  • SiC Boat for Solar Cell Diffusion

    SiC Boat for Solar Cell Diffusion

    The reliability and outstanding performance of Semicorex SiC Boat for Solar Cell Diffusion stems from their ability to consistently deliver in the demanding conditions of solar cell production. The high-quality material properties of SiC ensure that these boats perform optimally over a wide range of operating conditions, contributing to the stable and efficient production of solar cells. Their performance attributes include excellent mechanical strength, thermal stability, and resistance to environmental stressors, making SiC Boat for Solar Cell Diffusion an indispensable tool in the photovoltaic industry.
  • Wafer Washing Cassette

    Wafer Washing Cassette

    Semicorex Wafer Washing Cassette, made from high-performance PFA material, is designed to securely hold and clean wafers in semiconductor, photovoltaic, and electronics manufacturing. Choose Semicorex for our commitment to delivering durable, reliable, and customizable products that enhance your production efficiency and product quality.*
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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