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    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • SiC-Coated Crystal Growth Susceptor

    SiC-Coated Crystal Growth Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
  • MOCVD Planet Susceptor for Semiconductor

    MOCVD Planet Susceptor for Semiconductor

    Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
  • SiC Coated Ring

    SiC Coated Ring

    Semicorex SiC Coated Ring is a crucial component in the semiconductor epitaxial growth process, designed to meet the demanding requirements of modern semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • SiC Carrier for ICP

    SiC Carrier for ICP

    Semicorex SiC Carrier for ICP is a high-performance wafer holder made of SiC-coated graphite, designed specifically for use in inductively coupled plasma (ICP) etching and deposition systems. Choose Semicorex for our world-leading anisotropic graphite quality, precision small-batch manufacturing, and uncompromising commitment to purity, consistency, and process performance.*
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    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

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    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

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