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It is a good way to improve our products and service. Our mission is to develop creative products to customers with a good experience for SiC membranes,Ceramic membrane,Silicon carbide membrane,SiC columnar membranes,SiC ceramic membrane, As a key enterprise of this industry, our corporation makes endeavours to become a leading supplier, dependant on the faith of expert quality & all over the world provider.
SiC membranes, We have been sincerely looking forward to cooperate with customers all over the world. We believe we can satisfy you with our high-quality products and solutions and perfect service . We also warmly welcome customers to visit our company and purchase our products.

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  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Wafer Tray

    SiC Wafer Tray

    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
  • Related Blog
  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • What is SiC coated graphite susceptor?

    In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

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