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According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.