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  • SiC Wafer Carrier in Semiconductor

    SiC Wafer Carrier in Semiconductor

    Semicorex SiC Wafer Carrier in Semiconductor, is a specialized tool used in the handling and processing of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Boat Holder

    Silicon Carbide Boat Holder

    Semicorex Silicon Carbide Boat Holder is a specialized product crafted from SiC material, meticulously designed for applications in industries such as photovoltaics, electronics, and semiconductors. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • 6

    6" Wafer Holders

    Semicorex 6" Wafer Holders are high-performance carrier engineered for the rigorous demands of SiC epitaxial growth. Choose Semicorex for unmatched material purity, precision engineering, and proven reliability in high-temperature, high-yield SiC processes.*
  • Rigid Graphite Felt

    Rigid Graphite Felt

    Semicorex Rigid Graphite Felt is a high-performance thermal insulation material made from PAN-based and viscose-based carbon fiber, widely used in high-temperature industrial furnaces. Choose Semicorex for its advanced manufacturing processes and proven expertise in delivering durable and reliable solutions for demanding semiconductor applications.*
  • Al2O3 Vacuum Chuck

    Al2O3 Vacuum Chuck

    Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
  • Related Blog
  • Reviews

  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

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