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Often customer-oriented, and it's our ultimate target to become not only probably the most reputable, trustable and honest provider, but also the partner for our customers for PFA,wafer cassette,wafer carrier,wafer box,Wafer Basket, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
PFA, Our company has already had a lot of top factories and expert technology teams in China, offering the best solutions, techniques and services to worldwide customers. Honesty is our principle, professional operation is our work, service is our goal, and customers' satisfaction is our future!

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    Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Chuck

    Tantalum Carbide Coating Chuck

    Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Semicorex Epitaxy Wafer Carrier provides a highly reliable solution for Epitaxy applications.The advanced materials and coating technology ensure that these carriers deliver outstanding performance, reducing operational costs and downtime due to maintenance or replacement.**
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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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  • The first 6-inch Gallium Oxide substrate industrialization company

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