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The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.