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GaN-on-SiC Epitaxial Wafers Carrier
  • GaN-on-SiC Epitaxial Wafers CarrierGaN-on-SiC Epitaxial Wafers Carrier
  • GaN-on-SiC Epitaxial Wafers CarrierGaN-on-SiC Epitaxial Wafers Carrier
  • GaN-on-SiC Epitaxial Wafers CarrierGaN-on-SiC Epitaxial Wafers Carrier
  • GaN-on-SiC Epitaxial Wafers CarrierGaN-on-SiC Epitaxial Wafers Carrier
  • GaN-on-SiC Epitaxial Wafers CarrierGaN-on-SiC Epitaxial Wafers Carrier

GaN-on-SiC Epitaxial Wafers Carrier

Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex SiC Coating of GaN-on-SiC Epitaxial Wafers Carrier is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
Our GaN-on-SiC Epitaxial Wafers Carrier is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our GaN-on-SiC Epitaxial Wafers Carrier.


Parameters of GaN-on-SiC Epitaxial Wafers Carrier

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of GaN-on-SiC Epitaxial Wafers Carrier

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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