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    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • AlN Heater

    AlN Heater

    The AlN Heater by Semicorex is designed to support and heat silicon wafers. Crafted from high-purity aluminum nitride (AlN), this heater offers an array of advanced features that cater to the needs of various high-precision applications, particularly in the semiconductor industry.**
  • High-Purity Quartz Crucibles

    High-Purity Quartz Crucibles

    Semicorex High-Purity Quartz Crucibles are critical component in the semiconductor industry, designed for the high-precision growth of single-crystal silicon. Semicorex's products, known for their exceptional quality and reliability, provide industry-leading solutions for the most demanding manufacturing processes.*
  • Silicon Epitaxial Deposition In Barrel Reactor

    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • Graphite Chuck

    Graphite Chuck

    Semicorex Graphite Chuck is a crucial component in polysilicon manufacturing, widely used in the solar industry. As the demand for high-purity silicon wafers increases, the need for high-performance processing tools such as graphite chucks has become essential. Manufactured from high-purity specialty graphite, our graphite chucks are designed to withstand extreme temperatures, chemical exposure, and mechanical stresses while maintaining dimensional stability.*
  • SiC Epitaxy

    SiC Epitaxy

    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

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